Normand Mousseau
Professor of Physics and Chair
Université de Montréal

Identification of a regime change in the microscopic relaxation of ion-implanted amorphous silicon using the kinetic ART method

Joly Jean-François, Mousseau Normand, Roorda Sjoerd, Physical Review B (soumis) (http://www.phys.umontreal.ca/~mousseau/articles/149.pdf), RIS, BibTeX.

Saturday 12 July 2014

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